2n3819 Transistor



2N3819N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50.TO-9211.

  1. The main components of this circuit are FET 2N3819, 555 timer IC, some resistors, and capacitors. FET or field-effect transistor is a transistor that uses the electric field to control the flow of current. 555 timer IC is used to provide oscillations or short/long.
  2. Description: 2N3819 N-Channel JFET Transistor TO-92. This listing is for one transistor. It is a 2N3819 N-Channel Depletion JFET VHF/UHF Amplifier from Farichild Semiconductor. It is equivalent to a 2N3819 from any other manufacturer.
2N3819
TRANSISTOR RF NCH 25V TO-92
Fairchild Semiconductor

2n3819 Transistor Price

1.2N3819.pdf (3 pages)
N-Channel JFET
25V
50mA
TO-92-3 (Standard Body), TO-226
Single
N-Channel
350 mW
25 V
25 V
100 mA
50 mA
2n3819
0.002 S to 0.0065 S
+ 150 C
25 V
- 65 C
Through Hole
Lead free / RoHS Compliant
-
-
-
-
-
-
Lead free / RoHS Compliant

Available stocks

Part Number
Quantity
2N3819
FSC
2n3819 Transistor
200
2N3819
FAIRCHILD
38 000
2N3819
NATIONAL
1
3.75 USD
2N3819
FAIRCHILD
3.75 USD
2N3819
FAIRCHILD
23
3.75 USD
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N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications
Epitaxial Silicon Transistor
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
V
I
T
V
V
On Characteristics
2n3819
Small Signal Characteristics
goss
C
P
R
GF
DSS
operating up to 450MHz, and for analog switching requiring low
Symbol
STG
GS
GS
D
rss
JC
Symbol
Forward Transfer Admittance
Gate Reverse Current
Gate-Source Voltage
Forward Transfer Conductance
Input Capacitance
Total Device Dissipation
Thermal Resistance, Junction to Case
Drain-Gate Voltage
Drain Current
Storage Temperature Range
1.6”
Parameter
A
=25 C unless otherwise noted
=25 C unless otherwise noted
T
=25 C unless otherwise noted
V
V
V

Transistor 2n3819 Caracteristicas

V
G
2N3819
DS
DS
DS
DS
= 1.0 A, V
= 15V, I
= -15V, V
= 15V, V
= 15V, V
Test Condition
D
DS
GS
GS
DS
= 200 A
= 0
= 0, f = 1.0KHz

2n3819 Transistor Replacement

= 0, f = 1.0KHz
= 0
350
357
1. Drain 2. Gate 3. Source
Min.
1600
1
-55 ~ 150
-25
50
Typ.
Max.
-7.5
8.0
4.0

2n3819 Transistor Equivalent

50
Units
Rev. A1, December 2002
C/W
mA
V
C
mhos
mA
mhos
pF
V

2N3819 Summary of contents

Page 1

... Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.5” 1.6” 0.06” ©2002 Fairchild Semiconductor Corporation 2N3819 T =25 C unless otherwise noted C Parameter T =25 C unless otherwise noted C Test Condition ...

Page 2

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, December 2002 ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

2n3819 Transistor Datasheet

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